| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for recording information on a semiconductor non-volatile memory cell with improved current efficiency. <P>SOLUTION: The semiconductor non-volatile memory 101 comprises a transistor, having a control electrode 30, a first main electrode region 21, and a second main electrode region 22; resistance change sections 23, 26; and a charge accumulation section. In the resistance change sections, a second-conductivity type that has lower impurity concentration than that of the first and second main electrode regions is provided at a part sandwiched by at least one electrode region of the first and second main electrode regions and a channel formation region 12 that faces the control electrode in the surface layer regions of the semiconductor substrate. The charge accumulating section is provided on the resistance change sections, contains an insulating layer, and can accumulate charges. When recording information on the semiconductor non-volatile memory in which information has been erased by accumulating charges at the charge accumulation section, in advance, a step of applying a high positive voltage to one main electrode region, a step of setting the other main electrode region to a ground voltage, and a step for applying a positive voltage in which a channel formation region is weakly inverted to a control electrode are included in the method, when the first-conductivity type is a p type and the second one is an n type. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
