| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce a cell area while realizing processing of a large amount of data. <P>SOLUTION: The nonvolatile memory device is provided with a first memory cell 1M, a first switch 51M for transferring first data to be written in the first memory cell 1M, a latch circuit 50M for holding a signal outputted from the first switch 51M, a first selector 33M for transferring a signal outputted from the latch circuit 50M, a first bit line BL for receiving a signal outputted from the first selector 33M, a second memory cell 1S, a second switch 51S for transferring second data to be written in the second memory cell 1S, a second selector 33S connected to the second switch 51S, and a second bit line BL for receiving a signal outputted from the second selector 33S. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
