发明名称 Semiconductor memory device performing auto refresh in the self refresh mode
摘要 Method and apparatus for use with multi-bank Synchronous Dynamic Random Access Memory (SDRAM) circuits, modules, and memory systems are disclosed. In one described embodiment, an SDRAM circuit receives a bank address to be used in an auto-refresh operation, and performs the auto-refresh operation on the specified bank and for a current refresh row. The device is allowed to enter a self-refresh mode before auto-refresh operations have been completed for all banks and the current refresh row. The memory device completes refresh operations for the current refresh row before proceeding to perform self-refresh operations for new rows. Other embodiments are described and claimed.
申请公布号 US2006018174(A1) 申请公布日期 2006.01.26
申请号 US20050169241 申请日期 2005.06.27
申请人 PARK TAEK-SEON;LEE YUN-SANG;LEE JUNG-BAE 发明人 PARK TAEK-SEON;LEE YUN-SANG;LEE JUNG-BAE
分类号 G11C7/00 主分类号 G11C7/00
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