| 摘要 |
<p>A low temperature poly-silicon thin film transistor is mainly comprised of a top-cover layer, a poly-silicon thin film and a gate electrode. Wherein the top-cover layer is arranged on the substrate , and has a hollow space between them. The poly-silicon thin film is arranged on the top-cover layer, and divided with a channel region and source/drain region at the both sides of the channel region. Wherein the channel region is placed on the top of the hollow space. Othewise, the gate electrode is arranged on the top of the channel region. Since the hollow space is placed on the channel region,when a laser annealing process is performed, the heat conductivity of this region is lower, silicon atom of the region has longer re-crystallization time, so that larger size of the grain has been formed, and grain boundary in the channel region is reduced. The grain orientation of the poly-silicon film is parcelled to the transmission direction of electron in the poly-silicon thin film transistor, so that the operation effect of the poly-silicon thin film transistor can be improved.</p> |
