SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device wherein a high-quality gate insulating film can be formed on an interface of a silicon substrate and interface electrical characteristics are improved. On the surface of a silicon substrate (101), a base layer (oxide film or oxynitride film) (102) including silicon is formed. On the surface of the formed base layer (102), a metal compound layer (103) composed of a metal compound is deposited as a metal supplying source or metal diffusion source. The base layer (102) and the metal compound layer (103) are heat-treated to diffuse a metal element of the metal compound included in the metal compound layer (103) into the base layer (102). Then, on the silicon substrate (101), a gate insulating film (106) having a high dielectric constant is formed, and a semiconductor device having a metal atom quantity in the metal compound in the metal compound layer (103) within a range of 1.5E+15cm<sup