发明名称 PASSIVATED DYE-SENSITIZED OXIDE SEMICONDUCTOR ELECTRODE AND SOLAR CELL USING SAID ELECTRODE
摘要 <P>PROBLEM TO BE SOLVED: To provide a dye-sensitized solar cell in which charge recombination speed on the oxide semiconductor surface of the solar cell is decreased and efficiency is improved. <P>SOLUTION: The oxide semiconductor membrane of the dye-sensitized oxide semiconductor electrode which is equipped with a conductive substrate, an oxide semi-conductor membrane provided on the surface of the conductive substrate, and a sensitized-dye adsorbed on the oxide semiconductor membrane is further treated and passivated by a silanizing agent of one kind or more containing a partial structure R<SP>1</SP>-Si-OR<SP>2</SP>(wherein, R<SP>1</SP>and R<SP>2</SP>are each independently alkyl group or R<SP>1</SP>is alkyl group and R<SP>2</SP>is hydrogen or aryl group). The solar cell equipped with the electrode that is passivated by this treatment shows an improved efficiency and other useful characteristics compared with a similar electrode that does not have the passivated electrode. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006024565(A) 申请公布日期 2006.01.26
申请号 JP20050195937 申请日期 2005.07.05
申请人 GENERAL ELECTRIC CO <GE> 发明人 SPIVACK JAMES L;GASAWAY SHELLIE V;SICLOVAN OLTEA P
分类号 H01M14/00;H01L31/04 主分类号 H01M14/00
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