| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where any regions other than a doped region suffer thermal damage a little even if the doped region is subjected to an impurity activation treatment by the use of excimer laser annealing, when a thin film transistor equipped with a gate electrode of laminated structure is formed on an insulating transparent board large in area, to provide its manufacturing method, and to provide a display device equipped with the semiconductor device. SOLUTION: The gate electrode 6 is formed on a polysilicon layer 7 provided on a glass board 1 through a gate insulating layer 3. The doped region 8 is formed in the polysilicon layer 7 by injecting impurities into the polysilicon layer 7 through the gate electrode 6 as a mask, then an insulating layer 4 is formed on the gate electrode 6, and an insulating film 5 is formed so as to cover them. At this point, a stepped part which is set low at the peripheral part of the gate electrode 6 and high at its center is formed on the surface of the insulating film 5 located on the gate electrode 6, and furthermore the parts of the insulating layer 4 and the insulating film 5 located above the center of the gate electrode 6 are set higher in reflectance to a laser beam than the parts of the insulating film 5 and the gate insulating layer 3 above the doped region 8. COPYRIGHT: (C)2006,JPO&NCIPI
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