METHOD FOR FORMING POLYSILICON BASED THIN FILM, AND METHOD FOR MANUFACTURING DISPLAY

摘要

PROBLEM TO BE SOLVED: To solve a problem in a method for forming a polysilicon based thin film by scanning an amorphous silicon based thin film formed on an insulating substrate with a pulse laser that a cicle time is long because high temperature dehydrogenation processing is required for a several hour. SOLUTION: An amorphous silicon based thin film containing hydrogen by 7 atomic% or less is formed on an insulating substrate by catalyst CVD and irradiated with a pulse laser as dehydrogenation processing. Subsequently, the amorphous silicon based thin film is irradiated with a pulse laser and crystallized, thus forming a polysilicon based thin film. COPYRIGHT: (C)2006,JPO&NCIPI