摘要 |
<p>Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450°C; for antimony, the temperature is at least about 650°C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.</p> |
申请人 |
ON INTERNATIONAL, INC.;BURGENER, ROBERT, H., II;FELIX, ROGER, L.;RENLUND, GARY, M. |
发明人 |
BURGENER, ROBERT, H., II;FELIX, ROGER, L.;RENLUND, GARY, M. |