Production of a semiconductor component on a substrate comprises adhering a silicon wafer with a metal-containing phase containing aluminum and/or silver to a high temperature stable support made from silicon carbide and heat treating

摘要

Production of a semiconductor component on a substrate comprises adhering a silicon wafer (3) with a metal-containing phase containing aluminum and/or silver to a high temperature stable support (1) made from silicon carbide and heat treating to produce a mechanical solid connection between the semiconductor and ceramic with a metal-containing conducting intermediate layer and forming an ohmic contact between the paste (2) and semiconductor component. An independent claim is also included for a semiconductor component produced by the above process.