GROWTH OF INORGANIC THIN FILMS USING SELF-ASSEMBLED MONOLAYERS AS NUCLEATION SITES

摘要

Systems and methods for preparing inorganic-organic interfaces using organo-transition metal complexes and self -assembled monolayers as organic surfaces. In one embodiment, a silicon wafer is cleaned and reacted with stabilized pirhana etch to provide an oxide surface. The surface is reacted with the trichlorosilyl end of alkyltrichlorosilanes to prepare self assembling monomers (SAMs). The alkyltrichlorosilanes have the general formula R1-R-SiC1<SUB>3</SUB>, where R1 is -OH, -NH<SUB>2</SUB>, -COOH, -SH, COOCH<SUB>3</SUB>, -CN, and R is a conjugated hydrocarbon, such as (CH2)<SUB>n</SUB> where n is in the range of 3 to 18. The functionalized end of the SAM can optionally modified chemically as appropriate, and is then reacted with metal-bearing species such as tetrakis(dimethylamido)titanium, Ti[N(CH<SUB>3</SUB>)<SUB>2</SUB>]<SUB>4</SUB>, (TDMAT) to provide a titanium nitride layer.