发明名称 Semiconductor laser device
摘要 A semiconductor laser device includes: an electrically insulating film, on the top face of a laser chip; and a metal film, on the electrically insulating film. The electrically insulating film and/or the metal film has, in plan, a polygonal shave with five or more apexes, each of the apexes having an interior angle less than 180 degrees. Stress due to a change of temperature during operation is reduced, resulting in a semiconductor laser device having a longer life and higher reliability.
申请公布号 US2006018358(A1) 申请公布日期 2006.01.26
申请号 US20050144772 申请日期 2005.06.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KADOWAKI TOMOKO;TAKIGUCHI TOHRU;TANAKA TOSHIO;MIHASHI YUTAKA
分类号 H01S3/097;H01S5/00 主分类号 H01S3/097
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