发明名称 |
Method for manufacturing solid-state image sensor |
摘要 |
In a method for manufacturing a solid-state image sensor including forming a photodetector portion for a photoelectric conversion in a semiconductor substrate, and forming a shift register for transferring a signal charge read out from the photodetector portion, an annealing is carried out after an ion implantation for forming a buried channel region constituting the shift register. It is possible to provide a method for manufacturing a solid-state image sensor that avoids the formation of crystal defects in a shift register and a photodetector portion and achieves an excellent output image quality and a large saturation electric charge.
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申请公布号 |
US2006019423(A1) |
申请公布日期 |
2006.01.26 |
申请号 |
US20050145675 |
申请日期 |
2005.06.06 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUZUKI MASAKATSU;YOSHITA MITSUGU |
分类号 |
H01L21/425 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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