发明名称 |
MASK PATTERN FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING FINE PATTERNS |
摘要 |
<p>Provided are a mask pattern including a silicon-containing self-assembled molecular layer, a method of forming the same, and a method of fabricating a semiconductor device. The mask pattern includes a resist pattern formed on a semiconductor substrate and the self-assembled molecular layer formed on the resist pattern. The self-assembled molecular layer has a silica network formed by a sol-gel reaction. To form the mask pattern, first, the resist pattern is formed with openings on an underlayer covering the substrate to expose the underlayer to a first width. Then, the self-assembled molecular layer is selectively formed only on a surface of the resist pattern to expose the underlayer to a second width smaller than the first width. The underlayer is etched by using the resist pattern and the self-assembled molecular layer as an etching mask to obtain a fine pattern.</p> |
申请公布号 |
KR20060007776(A) |
申请公布日期 |
2006.01.26 |
申请号 |
KR20040057142 |
申请日期 |
2004.07.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAH, JUNG HWAN;HONG, JIN;KIM, HYUN WOO;HATA MITSUHIRO;KOLAKEMAYYA SUBRAMANYA;WOO, SANG GYUN |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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