| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a capacitor with a large capacitance, reduced leakage current, and prolonged lifetime of time-dependent dielectric breakdown (TDDB), and to provide a manufacturing method therefor. <P>SOLUTION: A capacitor comprises an opening 4a formed in an interlayer insulating film 3 on a semiconductor substrate 1; a lower electrode 5 made of polycrystalline silicon with a rugged surface part on the inner wall of the opening 4a; a chemical oxide film 7 formed on the uneven surface part of the lower electrode 5; a silicon oxynitride film 8 which is obtained by modifying the chemical oxide film 7 through nitriding treatment; a capacitive insulating film 9 made of a metal oxide film, which is formed on the silicon oxynitride film 8; and an upper electrode 10 formed on the capacitive insulating film 9. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
