| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To attain improvement of electrical characteristics, quality and productivity by suppressing lateral resonant vibration. <P>SOLUTION: The thin film bulk acoustic resonator is composed of: an insulating substrate 2; a first electrode layer 4 laminated and formed through a cavity part 3 on a principal surface 2a of the substrate 2; a piezoelectric layer 5; and a second electrode layer 6. In the resonator, a pseudo resonance control opening 11 of an aperture shape which has a center O2 eccentric outward from a center O1, opens with the piezoelectric layer 5 turned outward and constitutes a counter side non-parallel with the outer peripheral edge of the second electrode layer 2 inside the second electrode layer 6. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
