| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a layer arrangement capable of overcoming a problem related to epitaxial growth. SOLUTION: In a manufacturing method of a layer arrangement of the present invention, a first layer (203) having a thickness larger than a minimum thickness for the epitaxial growth of a second layer (408) is formed, a second layer (408) is epitaxially grown on the first layer (203), and a third layer (409) is formed on the second layer (408). Further, a handling wafer (510) is joined on the third layer, and the substrate is removed from a second surface facing a first surface, and the first layer (203) is partially made to be thin from the second surface, and as a result, after making the layer thin, the first layer (203) has a thickness smaller than the minimum thickness for the epitaxial growth. COPYRIGHT: (C)2006,JPO&NCIPI
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