发明名称 Thermoelectric Circuits Utilizing Series Isothermal Heterojunctions
摘要 Isothermal semiconductor(s) forming a conductive bridge at the two junctions of the of a thermoelectric circuit legs are used to produce an increase the Seebeck coefficient of the circuit. For the circuit legs, a p- and n-type semiconductor pair is preferred in which the valence and conduction bands of the n-type are higher in energy (i.e. having a lower electron affinity) than those of the p-type leg. The isothermal semiconductor may be either p- or n-type. If it is n-type, its conduction band lies below (i.e. having a higher electron affinity) that of the n-type leg, and if it is a p-type material, its valence band lies above (i.e. having a lower electron affinity) that of the p-type leg. This arrangement results in an increase thermal conversion efficiency in comparison to the corresponding TE circuit that does not have the isothermal semiconductor present.
申请公布号 US2006016248(A1) 申请公布日期 2006.01.26
申请号 US20050161182 申请日期 2005.07.26
申请人 WALSH KEVIN 发明人 WALSH KEVIN
分类号 G01M3/04 主分类号 G01M3/04
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