发明名称 Hardened nano-imprinting stamp
摘要 <p>A hardened nano-imprinting stamp (10) includes a plurality of silicon-based nano-sized features (12) that have a hardened shell (20) of silicon carbide, silicon nitride, or silicon carbide nitride. The hardened shell (20) is made harder than the underlying silicon by a plasma carburization and/or a plasma nitridation process. During the plasma process, atoms of carbon C and/or nitrogen N bombard and penetrate a plurality of exposed surfaces (12e, 12s, 12t, 12b, 12f, 13) of the nano-sized features 12 and chemically react with the silicon (Si) to form the hardened shell (20) of silicon carbide, silicon nitride, or silicon carbide nitride. The lifetime, durability, economy, and accuracy of the resulting hardened nano-imprinting stamp (10) are improved. </p>
申请公布号 EP1424309(A3) 申请公布日期 2006.01.25
申请号 EP20030256732 申请日期 2003.10.24
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 LEE, HEON;JUNG, GUN-YOUNG
分类号 B82B3/00;B81C1/00;G03F7/00;H01L21/027 主分类号 B82B3/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利