发明名称 |
Method for fabricating a semiconductor element from a dispersion of semiconductor particles |
摘要 |
A method for forming a semiconductor element with the following steps. Depositing a suspension of particles of a semiconductor and a solution of the same or a different semiconductor or a precursor thereof on a substrate. Solidifying the mixture so that the solution electrically connects adjacent particles of the suspended particles. The semiconductors being of the same conductivity type. The soluted semiconductor comprising a solvent. The solidifying process is heating the semiconducting mixture. The soluted semiconductor is a pentacene- or a SnS2 precursor. The semiconductor particles is a collodial suspension. The deposition is by projection of liquid droplets. The process can involve a step of annealing. A semiconductor element of particles in a matrix of a binder with same conductivity type which is connecting adjacent particles. The semiconductor can be organic. |
申请公布号 |
GB2416428(A) |
申请公布日期 |
2006.01.25 |
申请号 |
GB20040016124 |
申请日期 |
2004.07.19 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
THOMAS KUGLER;CHRISTOPHER NEWSOME;DAVID RUSSELL;SHUNPU LI |
分类号 |
H01L21/00;H01L21/368;H01L29/00;H01L31/0384;H01L51/00;H01L51/05 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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