发明名称 Method for fabricating a semiconductor element from a dispersion of semiconductor particles
摘要 A method for forming a semiconductor element with the following steps. Depositing a suspension of particles of a semiconductor and a solution of the same or a different semiconductor or a precursor thereof on a substrate. Solidifying the mixture so that the solution electrically connects adjacent particles of the suspended particles. The semiconductors being of the same conductivity type. The soluted semiconductor comprising a solvent. The solidifying process is heating the semiconducting mixture. The soluted semiconductor is a pentacene- or a SnS2 precursor. The semiconductor particles is a collodial suspension. The deposition is by projection of liquid droplets. The process can involve a step of annealing. A semiconductor element of particles in a matrix of a binder with same conductivity type which is connecting adjacent particles. The semiconductor can be organic.
申请公布号 GB2416428(A) 申请公布日期 2006.01.25
申请号 GB20040016124 申请日期 2004.07.19
申请人 SEIKO EPSON CORPORATION 发明人 THOMAS KUGLER;CHRISTOPHER NEWSOME;DAVID RUSSELL;SHUNPU LI
分类号 H01L21/00;H01L21/368;H01L29/00;H01L31/0384;H01L51/00;H01L51/05 主分类号 H01L21/00
代理机构 代理人
主权项
地址