发明名称 METHOD AND APPARATUS FOR TREATING ARTICLE TO BE TREATED
摘要 A thermal treatment apparatus 1 includes a reaction tube 2 for containing wafers 10 contaminated with organic substances having a heater 12 capable of heating the reaction tube; a first gas supply pipe 13 for carrying oxygen gas into the reaction tube 2; and a second gas supplypipe 14 for carrying hydrogen gas into the reaction tube 2. Oxygen gas and hydrogen gas are supplied through the first gas supply pipe 13 and the second gas supply pipe 14, respectively, into the reaction tube 2, and the heater 12 heats the reaction tube 2 at a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tube 2 and thereby the organic substances adhering to the wafers 10 are oxidized, decomposed and removed. <IMAGE>
申请公布号 EP1351283(A4) 申请公布日期 2006.01.25
申请号 EP20010999967 申请日期 2001.12.04
申请人 TOKYO ELECTRON LIMITED 发明人 HISHIYA, SHINGO;FURUSAWA, YOSHIKAZU;HAYASHI, TERUYUKI;SAITO, MISAKO;UMEZAWA, KOTA;SATO, SYOICHI
分类号 C30B33/00;H01L21/00;H01L21/306;H01L21/311;H01L21/316 主分类号 C30B33/00
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