发明名称 |
RADIO FREQUENCY LIMITER CIRCUIT |
摘要 |
<p>A limiter circuit includes a rectification circuit coupled to an input of the limiter circuit. The rectification circuit produces a voltage having a predetermined average level. The level is a function of an input signal fed to the input of the limiter circuit. A voltage divider circuit is coupled to the rectification circuit for producing an output voltage having a level proportional to the input signal. An enhancement mode field effect transistor has a gate electrode fed by the output voltage produced by the voltage divider circuit. The transistor has drain and source electrodes coupled to an output of the limiter circuit and a reference potential, respectively. A transmission line is coupled between the input of the limiter and the output of the limiter circuit. The transmission line has an electrical length nlambda/4, where lambda is the nominal operating wavelength of the limiter circuit and n is an odd integer. The use of an enhancement mode transistor with a positive gate threshold for conduction, greatly simplifies the limiter circuit compared with conventional designs using depletion mode transistors.</p> |
申请公布号 |
EP1618653(A1) |
申请公布日期 |
2006.01.25 |
申请号 |
EP20040759822 |
申请日期 |
2004.04.09 |
申请人 |
RAYTHEON COMPANY |
发明人 |
ADLERSTEIN, MICHAEL, G.;TREMBLAY, JOHN, C. |
分类号 |
H03G11/04;H03F1/52;H03F3/60;(IPC1-7):H03F3/60 |
主分类号 |
H03G11/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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