发明名称 |
COMPLEMENTARY MIS DEVICE |
摘要 |
A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor. <IMAGE> |
申请公布号 |
EP1455393(A4) |
申请公布日期 |
2006.01.25 |
申请号 |
EP20020786074 |
申请日期 |
2002.12.10 |
申请人 |
OHMI, TADAHIRO;TOKYO ELECTRON LIMITED |
发明人 |
OHMI, TADAHIRO;KOTANI, KOJI;SUGAWA, SH. |
分类号 |
H01L21/8238;H01L27/092;H01L29/04;H01L29/786 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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