发明名称 Semiconductor integrated circuit and method of manufacturing the same
摘要 Prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI is realized. To do this, a contact array is provided in which a plurality of contacts is formed so as to be aligned in the vertical and the horizontal directions. In the contact array, the contact formation spacing in both of the vertical and the horizontal directions is larger than the contact formation spacing determined by the manufacturing process. Consequently, the number of contacts formed in the contact array can be reduced to not more than the number of contacts that can be formed in the unit area determined by the process, so that prevention of coming off of the layer where the contacts are formed and the isolating film and breakage of the LSI can be realized.
申请公布号 US6989597(B2) 申请公布日期 2006.01.24
申请号 US20030685387 申请日期 2003.10.16
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 FUJINO TAKEYA;KIMURA FUMIHIRO
分类号 H01L23/48;H01L21/82;H01L23/522;H01L27/04 主分类号 H01L23/48
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