| 发明名称 |
Forming a contact in a thin-film device |
| 摘要 |
An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, forming a re-entrant profile with the remaining portion of the liftoff stencil and depositing a conductor material in contact with the at least one material on the re-entrant profile.
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| 申请公布号 |
US6989327(B2) |
申请公布日期 |
2006.01.24 |
| 申请号 |
US20040770083 |
申请日期 |
2004.01.31 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SHARMA MANISH;ANTHONY THOMAS C.;LEE HEON |
| 分类号 |
H01L21/44;H01L21/027;H01L21/033;H01L21/311;H01L43/12 |
主分类号 |
H01L21/44 |
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