发明名称 Via hole and fabricating method thereof
摘要 <p>PURPOSE: A contact part of a semiconductor device is provided to increase a contact area of a wire and a metal interconnection and improve cohesion of a metal sidewall and lead by forming the metal sidewall on the side surface of a contact hole when the metal interconnection is connected to the wire through the contact hole. CONSTITUTION: A pad is electrically connected to the outside and the semiconductor device formed on a substrate(100). The substrate is covered with an insulation layer having a contact hole(114) exposing the pad. A metal layer is formed on the inner wall of the contact hole. The sidewall of the insulation layer is covered with the metal layer.</p>
申请公布号 KR100545165(B1) 申请公布日期 2006.01.24
申请号 KR20030047265 申请日期 2003.07.11
申请人 发明人
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
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