| 摘要 |
A planar metal antenna mounted on a semiconductor body and incorporating an active circuit element, for example a diode, integrated in the path of the antenna. Connection between the antenna metal and a peripheral contact is provided by a connecting link of resistive sheet material sub-divided, by voids or by inclusions of high resistive material, into a number of conductive tracks each of width and spacing of dimension small compared with the width of the antenna. The link thus exhibits an effectively high sheet resistivity at high frequency-i.e. at a frequency at or near to the frequency of antenna resonance and thus affords effective hf isolation between the antenna and the contact. At the same time, at dc and at intermediate frequency, a relatively low resistance path is afforded for bias and for extraction of IF signal. The number, width and spacing of the tracks may be varied with distance from the antenna metal to minimize the dc resistivity. Thus the track density may be graded; the link may be comprised of several sections each of different track density. Alternatively, the track density may be made a tapered function of distance from the antenna metal by variation of the size and density of voids or high resistivity inclusions. The connection may be formed of material overlying the semiconductor body. Alternatively, it may be defined in the semiconductor body by dopant implant.
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