发明名称 |
Process for producing single crystal of compound semiconductor and crystal growing apparatus |
摘要 |
In a production method for producing a compound semiconductor single crystal by LEC method using a crystal growth apparatus with a double crucible structure, it was made to grow up a crystal by covering the second crucible with a plate-like member having a pass-through slot for being capable of introducing a crystal pulling-up shaft having a seed crystal holding part at a tip into the second crucible and creating a state where an atmosphere within the second crucible scarcely changes (a semi-sealed structure).
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申请公布号 |
US6989059(B2) |
申请公布日期 |
2006.01.24 |
申请号 |
US20040497916 |
申请日期 |
2004.06.07 |
申请人 |
NIKKO MATERIALS CO., LTD. |
发明人 |
ASAHI TOSHIAKI;SATO KENJI;YABE TAKAYUKI;ARAKAWA ATSUTOSHI |
分类号 |
C30B15/02;C30B15/00;C30B15/12;C30B27/02;C30B29/48 |
主分类号 |
C30B15/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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