| 摘要 |
A micromachined single-crystalline silicon micro-gyroscope comprising oxide/polysilicon/metal triple layer for electrical isolation is disclosed. The isolation method includes forming the triple layer composed of an insulation layer formed over an exposed surface of the silicon microstructure, a conductive layer formed over the entire insulation layer, and a metal layer formed over a top portion of the microstructure; and etching the conductive layer at the bottom to form electrical isolation between parts of the microstructure. The method does not require a separate photolithography process for isolation, and can be effectively applied to microstructures having high aspect ratios and narrow trenches.
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