Method for producing nitride semiconductor, semiconductor wafer and semiconductor device

摘要

A method for producing a nitride semiconductor comprising growing at least first to third nitride semiconductor layers on a substrate; said first nitride semiconductor layer being grown at 400-600° C.; and said second and third nitride semiconductor layers being grown on said first nitride semiconductor layer at 700-1,300° C. after heat-treating said first nitride semiconductor layer at 700-1,300° C.; used as a carrier gas supplied near said substrate together with a starting material gas being a hydrogen/nitrogen mixture gas containing 63% or more by volume of hydrogen during growing said second nitride semiconductor layer, and a hydrogen/nitrogen mixture gas containing 50% or more by volume of nitrogen during growing said third nitride semiconductor layer; and said second nitride semiconductor layer being formed to a thickness of more than 1 mum.