发明名称 EXHAUST GAS TREATMENT PROCESS AND TREATMENT SYSTEM
摘要 Exhaust gas containing fluorine gas or halogen fluoride gas emitted from etching or cleaning steps is burned in a combustion chamber having a fluoride passivation film formed on its surface. It is possible to treat exhaust gas emitted from semiconductor fabrication processes which contains fluorine gas or halogen fluoride gas in high concentrations or large volumes, while abatement treatment can be accomplished safely and efficiently with less energy usage.
申请公布号 KR100544760(B1) 申请公布日期 2006.01.24
申请号 KR20037013443 申请日期 2003.10.13
申请人 发明人
分类号 F23G7/06 主分类号 F23G7/06
代理机构 代理人
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