发明名称 |
Method for reducing shallow trench isolation consumption in semiconductor devices |
摘要 |
A method for reducing shallow trench isolation (STI) consumption during semiconductor device processing includes forming a hardmask over a semiconductor substrate, patterning the hardmask and forming a trench within the substrate. The trench is filled with an insulative material that is implanted with boron ions and thereafter annealed.
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申请公布号 |
US6989318(B2) |
申请公布日期 |
2006.01.24 |
申请号 |
US20030605727 |
申请日期 |
2003.10.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DORIS BRUCE B.;LI YING |
分类号 |
H01L21/76;C01D7/00;H01L21/762;H01L29/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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