Method for fabricating a p-type shallow junction using diatomic arsenic

摘要

The present invention provides, in one embodiment, a method of fabricating a semiconductor device ( 100 ). The method comprises exposing a portion ( 125 ) of an n-type substrate ( 105 ) to an arsenic dimer ( 130 ). The method also includes forming a p-type lightly doped drain (LDD) region ( 145 ) within the portion of the n-type substrate ( 125 ). Other embodiments advantageously incorporate the method into methods for making PMOS devices.