摘要 |
A transistor is located on a base layer 1 resting on a semiconductor substrate SB and formed from a relaxed silicon-germanium layer, and includes, under the isolated gate 7 , a first strained silicon layer 2 resting on the base layer 1 , surmounted by a buried insulating layer 10 , surmounted by a second strained silicon layer 4 extending between the source S and drain D regions.
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