FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE,申请号KR20020066073-传众专利搜索

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发明名称	FABRICATION METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要
申请公布号	KR100544264(B1)	申请公布日期	2006.01.23
申请号	KR20020066073	申请日期	2002.10.29
申请人		发明人
分类号	H01L21/8247;C02F9/00;H01L21/304;H01L21/306;H01L21/8234;H01L27/10;H01L27/115;H01L29/788;H01L29/792	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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