Method of transparent electrode for ohmic contact to p-AlGaInN compound semiconductor using zinc oxide,申请号KR20040021770-传众专利搜索

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发明名称	Method of transparent electrode for ohmic contact to p-AlGaInN compound semiconductor using zinc oxide
摘要
申请公布号	KR100543414(B1)	申请公布日期	2006.01.23
申请号	KR20040021770	申请日期	2004.03.30
申请人		发明人
分类号	H01L21/324	主分类号	H01L21/324
代理机构		代理人
主权项
地址

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