| 发明名称 |
Control of strain in device layers by prevention of relaxation |
| 摘要 |
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. Strain in the strained semiconductors is controlled for improved device performance.
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| 申请公布号 |
US2006014366(A1) |
申请公布日期 |
2006.01.19 |
| 申请号 |
US20050227529 |
申请日期 |
2005.09.15 |
| 申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
CURRIE MATTHEW T. |
| 分类号 |
H01L27/12;H01L21/20;H01L21/331;H01L21/336;H01L21/337;H01L21/425;H01L21/762;H01L21/84;H01L29/786 |
主分类号 |
H01L27/12 |
| 代理机构 |
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