发明名称 PHOTOMASK AND NEAR-FIELD EXPOSURE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To equate the intensity distribution of near-field light in each slit in a photomask used for near-field exposure. <P>SOLUTION: Exposure is made by exposure light having a wavelength of 436nm by using the photomask. Five slits (s) are formed mutually in parallel in a light-shielding film 102 in the photomask. The opening length of each slit (s) is 2,000nm, and the pitch (p) (distance between centers) between respective slits S is 100nm. The opening width of three inner slits S is set to 40nm, and that of two outer slits S is set to 50nm. As a result, when exposure is made by exposure light having a wavelength of 436nm, the intensity distribution of near-field light in each slit (s) can be made equal. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006019445(A) 申请公布日期 2006.01.19
申请号 JP20040194819 申请日期 2004.06.30
申请人 CANON INC 发明人 MIZUTANI NATSUHIKO;INAO YASUHISA
分类号 H01L21/027;G03F1/36;G03F1/68;G03F7/20 主分类号 H01L21/027
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