| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable the low-resistance and surface planarization of an intermediate layer comprising a n-type group III nitride semiconductor between a crystal substrate and an emission part, and to enable the layer to raise emission intensity. <P>SOLUTION: The device is a group III nitride semiconductor emission device 1 that the crystal layer comprising the group III nitride semiconductor (empirical formula Al<SB>X</SB>Ga<SB>Y</SB>In<SB>Z</SB>N<SB>1-a</SB>M<SB>a</SB>:0≤X≤1, 0≤Y≤1, 0≤Z≤1 and X+Y+Z=1, symbol M represents a group V element other than nitrogen (N), and 0≤a<1) formed on the crystal substrate 2 is determined to be the emission part 4 and is characterized in that the substrate 2 is such that mirror-surface grinding is performed on the surface and is laminated with a planar orientation slanted slightly from the exact direction, and by having a germanium periodic variation layer 3 comprising a n-type group III nitride semiconductor such that the atomic content of germamium (Ge) is periodically varied between the substrate 2 and the part 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
