| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of controlling impedance on a plasma source side and capable of eliminating impedance errors among devices or cleaning cycles. <P>SOLUTION: The plasma processing apparatus, that performs plasma processing on a wafer W by generating the plasma of a processing gas disposed between an upper electrode 34 and a lower electrode 16 divided into an internal electrode 38 and an external electrode 36, is provided, and the device has a resonant circuit 101, formed so as to allow a high-frequency current to flow into the electrode 38, a variable capacitor 78 provided on a supply line to the electrode 38, a sensor 89 for sensing bias V<SB>PP</SB>of the electrode 16, while making the capacitance of the variable capacitor 78 changed, and a control section 102 for detecting the signal from the sensor 89 to retrieve the resonance point of the circuit 101 and controlling the capacitance of the variable capacitor 78 at the resonance point to a value that serves as a reference. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
