| 摘要 |
PROBLEM TO BE SOLVED: To crystallize polycrystalline silicon with superior crystallinity, and prevent the bend of a substrate due to a high crystallization temperature at the time of crystallization at the same time. SOLUTION: A manufacturing method includes a stage of depositing a silicon film containing amorphous silicon on a substrate by a PECVD process or a LPCVD process, a stage of forming a polycrystalline silicon film by performing the heat treatment of the silicon film in an H<SB>2</SB>O atmosphere below a fixed temperature, a stage of forming a gate insulating film at the upper part of the polycrystalline silicon film, a stage of defining source/drain regions by forming an impurity region in the polycrystalline silicon film, and a stage of activating the impurity region. COPYRIGHT: (C)2006,JPO&NCIPI
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