发明名称 Method for post-treatment of semi-finished product after dry etching process
摘要 A post-treatment method of a semi-finished product after a dry etching process includes the steps of: providing the semi-finished product after completion of a dry etching process, the semi-finished product having a residue formed during the dry etching process; placing the semi-finished product in a chamber having an inlet and an outlet; introducing an SF<SUB>6 </SUB>gas into the chamber via the inlet to effect a reaction between the SF<SUB>6 </SUB>gas and the residue so as to produce a reaction gas; and discharging any remaining SF<SUB>6 </SUB>gas and the reaction gas out of the chamber via the outlet. The SF<SUB>6 </SUB>gas can completely react with the residue from the dry etching process and results residue gas pumped out by a vacuum system. It can entirely eliminate the residue over the contact hole and on the inside surface of the dry etching chamber, and can avoid electrical connection errors and improve the efficiency of manufacture. It also can clean the dry etching chamber and prolong the use life of the dry etching chamber.
申请公布号 US2006011577(A1) 申请公布日期 2006.01.19
申请号 US20050173389 申请日期 2005.06.30
申请人 INNOLUX DISPLAY CORP. 发明人 CHIU LI-FENG;GAU SHENG-CHOU;HUANG JUNG-LUNG;OU CHEN-HSIEN;HUANG CHANG K.;CHEN CHING F.
分类号 B44C1/22 主分类号 B44C1/22
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