| 摘要 |
<p>A semiconductor device is provided with a circuit which includes an insulating gate type field effect transistor element or a TFT element on a substrate. In the semiconductor device, compared with the capacitance of a gate insulating film per unit area at a channel part of the transistor element, the capacitance of the insulating film per unit area in an overlapping part between other electrodes or that between wirings are small. In the semiconductor device provided with the insulating gate type field effect transistor element or the TFT element on the substrate, operation of the circuit is less affected by parasitic capacitance, while high mutual conductance can be obtained and the absolute value of a gate threshold voltage can be reduced.</p> |
