| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is constituted in a structure provided with an MIM node capacitor in an SRAM cell, and to which a soft error measure can be performed by forming the capacitor in a simple structure. <P>SOLUTION: In the semiconductor device, a first node connecting conductive layer NC1 is formed on first and second contact plugs P1 and P2 formed in vertical columnar states on a silicon semiconductor substrate 1. In addition, a second node connecting conductive layer NC2 is formed on third and fourth contact plugs P3 and P4 also formed in vertical columnar state on the substrate 1. On the first and second node connecting conductive layers NC1 and NC2, a capacitor insulating film CI and a capacitor electrode layer CE are formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
