| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for correcting the irradiation parameters in an electron beam lithography system surely by taking the impact of fogging effect into account. <P>SOLUTION: The process for controlling proximity effect correction in an electron beam lithography system comprises a first step where an arbitrary set pattern is exposed without applying a process for controlling proximity correction. Geometrical arrangement of an obtained test structure is measured and a set of measurement data is obtained. In a numerical range, basic input parameters of α, β and η are obtained from the set of measurement data. A model is fitted to the measurement data set by varying at least the basic input parameters α, β and η of a control function and an optimal set of parameters is obtained. A correction function is applied to exposure control of the electron beam lithography system during exposure of a pattern according to design data. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
