发明名称 METHOD OF MANUFACTURING THIN-FILM TRANSISTOR PANEL
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor panel, capable of simplifying a step of manufacturing the thin-film transistor panel and saving the production cost and production time of the thin-film transistor panel. SOLUTION: The method of manufacturing the thin-film transistor panel includes a step of forming a first wiring on a substrate, a step of forming in sequence a first insulating layer and a semiconductor layer on the first wiring, a step of patterning the semiconductor layer and the first insulating layer through one photolithography process to different shapes and a step of forming a second wiring. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006018281(A) 申请公布日期 2006.01.19
申请号 JP20050188822 申请日期 2005.06.28
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIN HOSEI;LEE YONG-UK
分类号 G09F9/30;G02F1/1362;G02F1/1368;H01L21/00;H01L21/336;H01L21/77;H01L27/32;H01L29/786 主分类号 G09F9/30
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