| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor and a method of manufacturing the same, which can reduce dark current, and moreover, to enable the CMOS sensor of deep submicron or less to be manufactured by reducing the dark current. SOLUTION: The CMOS image comprises a first conductive type semiconductor substrate which is divided into an active region and a field region, an STI film which is formed in the field region, a second conductive type photodiode region which is formed in the first conductive type semiconductor substrate of the active region, a readout circuit part which is formed in the semiconductor substrate of the active region and reads out the data of the photodiode region, and a first conductive type well which is formed between the second conductive type photodiode region and the STI film. COPYRIGHT: (C)2006,JPO&NCIPI
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