| 摘要 |
PROBLEM TO BE SOLVED: To provide new constitution which does not use a method of introducing a conventional relaxation SiGe layer, for a transistor forming technology in which carrier mobility is increased by forming strained Si in a channel region. SOLUTION: An opening is provided at a silicon layer of an SOI substrate, a void which is larger than the opening is formed by selective etching of an insulating layer through the opening, and the void is buried by depositing polysilicon. Then heat treatment is applied, and a tensile stress is applied to the upper silicon layer involved in cubic expansion of a buried portion, and a convex curvature shape region is formed. A semiconductor device with the higher carrier mobility is fabricated by forming a transistor using the convex curvature shape region as a channel after an oxide film and the polysilicon are removed. COPYRIGHT: (C)2006,JPO&NCIPI
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