发明名称 Semiconductor device
摘要 In case that data are written in a flip-flop circuit by inverting the voltage to be supplied to a pair of write bit lines, the peak of the current waveform flowing in the pair of write bit lines is to be made gentler, whereby reduced power source noise and low power consumption should be achieved. To this end in a semiconductor device wherein flip-flop circuit for holding data, a memory cell including a transfer gate, a pair of write bit lines for writing data in the memory cell, are provided, in case that data are written in the flip-flop circuit by inverting the voltage to be supplied to the pair of write bit lines, the slew rate of the voltage to be supplied to the pair of write bit lines is made equal to predetermined value or less.
申请公布号 US2006013036(A1) 申请公布日期 2006.01.19
申请号 US20040976913 申请日期 2004.11.01
申请人 FUJITSU LIMITED 发明人 MAKI YASUHIKO
分类号 G11C11/00 主分类号 G11C11/00
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