发明名称 |
Methods of forming a thin film structure, and a gate structure and a capacitor including the thin film structure |
摘要 |
A thin film structure is formed that includes hafnium silicon oxide using an atomic layer deposition process. A first reactant including tetrakis ethyl methyl amino hafnium (TEMAH) is introduced onto a substrate. A first portion of the first reactant is chemisorbed to the substrate, whereas a second portion of the first reactant is physorbed to the first portion of the first reactant. A first oxidant is provided onto the substrate. A first thin film including hafnium oxide is formed on the substrate by chemically reacting the first oxidant with the first portion of the first reactant. A second reactant including amino propyl tri ethoxy silane (APTES) is introduced onto the first thin film. A first portion of the second reactant is chemisorbed to the first thin film, whereas a second portion of the second reactant is physorbed to the first portion of the second reactant. A second oxidant is provided onto the first thin film. A second thin film including silicon oxide is formed on the first thin film by chemically reacting the second oxidant with the first portion of the second reactant.
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申请公布号 |
US2006013946(A1) |
申请公布日期 |
2006.01.19 |
申请号 |
US20050182893 |
申请日期 |
2005.07.15 |
申请人 |
PARK HONG-BAE;KANG SANG-BOM;JIN BEOM-JUN;SHIN YU-GYUN |
发明人 |
PARK HONG-BAE;KANG SANG-BOM;JIN BEOM-JUN;SHIN YU-GYUN |
分类号 |
C23C16/00;B05D5/12 |
主分类号 |
C23C16/00 |
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